Business
- Wide Process window Hard Mask (300^650°C)
■ Excellent Film Uniformity (Thickness, k-value)
■ Edge Profile tunning with 2 zone heater
■ High Chucking Performance
■ Metal Doped Carbon
: Excellent selectivity, easy Removal and good Adhesion.
■ Application: DRAM, 3D NAND, Sys LSI
■ Hard Mask for Line & Space and Contact Etch
■ Hard Mask for High Aspect Ratio Etch Process
■ Gap-fill Carbon, Carbon Liner
■ EUV Under Layer
■ High Etch Selectivity and Low LWR
■ Low Temp Process (< 100°C)
■ Wide Process Control Knob
(ESC TEMP, Dual RF Coil, Coil Position )
■ Application: DRAM
■ DRAM Etch Hard Mask
■ Wafer Warpage Control thru Backside Depo: Si02, SiN
■ Improvement of overlay and Backside damage
■ Excellent Film Quality
(Uniformity, Low Defect, Crack Resistance)
■ High Productivity
■ Backside Si02, SiN (300 ~ 550°C)
■ Warpage control: ±500 ㎛
■ Excellent Film Property
(Uniformity, Adhesion, Mechanical Property)
■ Wide Process Range (k=2.5~3.0) and High Productivity
■ Various Configuration (Twin and Quad chamber)
■ Application: DRAM, Sys LSI
■ Low-k and ULK Oxide for DRAM and Sys LSI
■ Wide Process Temperature Range (200-550°C)
■ Excellent Film Property (Uniformity, Adhesion, Repeatability)
■ High Productivity
■ Flatform for Various Processes
■ Application: DRAM, 3D NAND, Sys LSI
■ Etch Stop Layer & Bonding SiCN
■ Passivation SiN
■ Low-k & ULK Oxide
■ Stack 0/N
■ Hybrid Bonding PE-SiCN
■ Easy Process Convert
■ High Throughput
■ Excellent Vertical Film Quality
■ Fully Proved @ Mass Production
■Application: DRAM, 3D NAND FLASH
■ α-Si,SiON, HTSiN
■ Gas based Isotropic Oxide Etching
■ Lamp Heated In-situ Dry Clean
■ High Speed Cyclic Etching
■ Variable Selectivity to Nitride
■ Highly selective Silicon Germanium Etching (200+)
■ Optimization of Radical Treatment
■ CCP based Radical and Gas etching
■ Native Oxide Removal
■ Lateral Oxide Recess
■ Airgap
■ Oxide Patterning for 3-D Structures
■ Metal doped Oxide Removal
■ Ox/SiN Multi layer Removal
■ 3D DRAM Silicon Germanium Stack Etching
■ Logic Device Silicon Germanium Stack Etching
■ Poly Hardmask Removal
■ CCP Plasma based Radical Etching
■ Plasma Damage Free
- High Speed Cyclic Etching
■ In-situ Chamber Cleaning
■ High Etch Rate
■ High Etch Selectivity
■ Isotropic Nitride Recess
■ Isotropic Poly Cleaning
■ Nitride Patterning for 3-D Structures
■ Highly Selective SixGey Stack Patterning
■ Poly/Metal Contact Cleaning
■ Backside Removal
■ Si Open
